2SA1012 Y(120-240)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR 72/ (PNP) FEATURES z High Current Switching Applications. z Low Collector Saturation Voltage z High Speed Swithing Time 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 1.25 W 5ș-$ Thermal Resistance Junction to Ambient 100 Я /W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Typ Unit Collector-base breakdown voltage V(BR)CBO IC =-0.1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO* IC =-10mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -1 μA hFE(1) VCE=-1V, IC=-1A 70 hFE(2)* VCE=-1V, IC=-3A 30 DC current gain 240 Collector-emitter saturation voltage VCE(sat)* IC=-3A, IB=-150mA -0.4 V Base-emitter saturation voltage VBE(sat)* IC=-3A, IB=-150mA -1.2 V Transition frequency fT Collector output capacitance Cob Turn-on Time ton Storage Time ts Fall Time tf VCE=-4V, IC=-1A 60 MHz VCB=-10V, IE=0, f=1MHz 170 pF 0.1 VCC=-30V,IC=-3A, IB1=-IB2=-0.15A μs 1.0 0.1 *Pulse test: tp≤300μs, δ≤0.02. CLASSIFICATION of hFE((1) Rank O Range 70-140 www.cj-elec.com Y 120-240 1 E,Mar,2016 Typical Characteristics Static Characteristic -1.6 (A) -10mA IC -8mA DC CURRENT GAIN COLLECTOR CURRENT IC Ta=100℃ hFE -9mA -1.0 -7mA -0.8 —— COMMON EMITTER Ta=25℃ -1.4 -1.2 hFE 1000 -6mA -5mA -0.6 -4mA -0.4 Ta=25℃ 100 -3mA -2mA -0.2 COMMON EMITTER VCE=-1V IB=-1mA 10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -500 —— -1.6 VCE -1.8 -2.0 -1 -10 -100 IC VBEsat -1.2 -100 Ta=25℃ Ta=100℃ -5000 -1000 COLLECTOR CURRENT (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0.0 -0.0 IC (mA) IC —— -1.0 -0.8 Ta=25℃ -0.6 Ta=100℃ -0.4 β=20 -10 -10 -1000 COLLECTOR CURRENT IC -5000 —— IC -1 -5000 -100 -1000 COLLECTOR CURRENT (mA) VBE Cob/ Cib 10000 IC —— VCB/ VEB (pF) Ta=25℃ Cib 1000 C CAPACITANCE T= a 25 ℃ T= a 10 0℃ -100 -5000 (mA) f=1MHz IE=0/IC=0 (mA) IC -10 COMMON EMITTER VCE=-1V -1000 COLLCETOR CURRENT β=20 -0.2 -100 -10 Cob 100 -1 -0.1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 1000 —— -1.0 V BE 10 -0.1 -1.2 -1 -10 REVERSE VOLTAGE (V) IC PC 2000 —— V -30 (V) Ta VCE=-4V 1750 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ 100 10 1 -50 1250 1000 750 500 250 0 -100 -1000 COLLECTOR CURRENT www.cj-elec.com 1500 IC 0 -1500 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) E,Mar,2016 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Max. Min. 2.380 2.200 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF.   3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF.   E,Mar,2016 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 E,Mar,2016